RMWP23001 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – 21-24 GHz Power Amplifier MMIC

June 2004
RMWP23001
21–24 GHz Power Amplifier MMIC
General Description
The RMWP23001 is a 4-stage GaAs MMIC amplifier
designed as a 21 to 24 GHz Power Amplifier for use in point
to point and point to multi-point radios, and various
communications applications. In conjunction with other
Fairchild Semiconductor amplifiers, multipliers and mixers
it forms part of a complete 23 GHz transmit/receive chipset.
The RMWP23001 utilizes our 0.25µm power PHEMT
process and is sufficiently versatile to serve in a variety of
power amplifier applications.
Features
• 4mil substrate
• Small-signal gain 22.5dB (typ.)
• 1dB compressed Pout 23.5dBm (typ.)
• Chip size 2.6mm x 1.2mm
Device
Absolute Ratings
Symbol
Vd
Vg
Vdg
I_D
P_IN
T_C
T_STG
R _JC
Parameter
Positive DC Voltage (+4V Typical)
Negative DC Voltage
Simultaneous (Vd–Vg)
Positive DC Current
RF Input Power (from 50Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
Ratings
+6
-2
8
607
+8
-30 to +85
-55 to +125
36.5
Units
V
V
V
mA
dBm
°C
°C
°C/W
©2004 Fairchild Semiconductor Corporation
RMWP23001 Rev. C