RMWB33001 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 33 GHz Buffer Amplifier MMIC

June 2004
RMWB33001
33 GHz Buffer Amplifier MMIC
General Description
The RMWB33001 is a 4-stage GaAs MMIC amplifier
designed as a 33 GHz Buffer Amplifier for use in point to
point and point to multi-point radios, and various communi-
cations applications. In conjunction with other Fairchild RF
amplifiers, multipliers and mixers it forms part of a complete
38 GHz transmit/receive chipset. The RMWB33001 utilizes
our 0.25µm power PHEMT process and is sufficiently
versatile to serve in a variety of medium power amplifier
applications.
Features
• 4 mil Substrate
• Small-signal Gain 24dB (typ.)
• Saturated Power Out 19dBm (typ.)
• Voltage Detector Included to Monitor Pout
• Chip size 3.2mm x 1.2mm
Device
Absolute Ratings
Symbol
Vd
Vg
Vdg
I_D
P_IN
T_C
T_STG
R _JC
Parameter
Positive DC Voltage (+4V Typical)
Negative DC Voltage
Simultaneous (Vd–Vg)
Positive DC Current
RF Input Power (from 50Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
Ratings
+6
-2
8
173
+8
-30 to +85
-55 to +125
130
Units
V
V
V
mA
dBm
°C
°C
°C/W
©2004 Fairchild Semiconductor Corporation
RMWB33001 Rev. C