RMWB12001 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 12 GHz Buffer Amplifier MMIC

June 2004
RMWB12001
12 GHz Buffer Amplifier MMIC
General Description
The RMWB12001 is a 3-stage GaAs MMIC amplifier
designed as an 8.5 to 12 GHz Buffer Amplifier for use in
point to point and point to multi-point radios, and various
communications applications. In conjunction with other
Fairchild RF amplifiers, multipliers and mixers it forms part
of a complete 23 and 26 GHz transmit/receive chipset. The
RMWB12001 utilizes our 0.25µm power PHEMT process
and is sufficiently versatile to serve in a variety of medium
power amplifier applications.
Features
• 4 mil Substrate
• Small-signal Gain 25dB (typ.)
• 3dB compressed Pout 21dBm (typ.)
• Voltage Detector Included to Monitor Pout
• Chip size 2.2mm x 1.7mm
Device
Absolute Ratings
Symbol
Vd
Vg
Vdg
I_D
P_IN
T_C
T_STG
R _JC
Parameter
Positive DC Voltage (+4V Typical)
Negative DC Voltage
Simultaneous (Vd–Vg)
Positive DC Current
RF Input Power (from 50Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
Ratings
+6
-2
8
207
+8
-30 to +85
-55 to +125
120
Units
V
V
V
mA
dBm
°C
°C
°C/W
©2004 Fairchild Semiconductor Corporation
RMWB12001 Rev. C