RMWB04001 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 4 GHz Buffer Amplifier MMIC

June 2004
RMWB04001
4 GHz Buffer Amplifier MMIC
General Description
The RMWB04001 is a 2-stage GaAs MMIC amplifier
designed as a 3.5 to 4 GHz Buffer Amplifier for use in point
to point and point to multi-point radios, and various
communications applications. In conjunction with other
amplifiers, multipliers and mixers it forms part of a complete
23 and 26 GHz transmit/receive chipset. The RMWB04001
utilizes our 0.25µm power PHEMT process and can be
used in a variety of applications requiring a high gain
medium power amplifier.
Features
• 4 mil substrate
• Small-signal gain 27dB (typ.)
• Saturated Power Out 20dBm (typ.)
• Voltage Detector Included to Monitor Pout
• Chip size 2.4mm x 1.3mm x 100µm
Device
Absolute Ratings
Symbol
Vd
Vg
Vdg
I_D
P_IN
T_C
T_STG
R _JC
Parameter
Positive DC Voltage (+4V Typical)
Negative DC Voltage
Simultaneous (Vd–Vg)
Positive DC Current
RF Input Power (from 50Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
Ratings
+6
-2
8
168
+7
-30 to +85
-55 to +125
140
Units
V
V
V
mA
dBm
°C
°C
°C/W
©2004 Fairchild Semiconductor Corporation
RMWB04001 Rev. C