RMPA61810 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC

March 2004
RMPA61810
Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC
General Description
The Fairchild Semiconductor RMPA61810 is a fully
monolithic power amplifier operating over the 6.0 to 18.0
GHz frequency band. The amplifier uses a 0.25 micron
Pseudomorphic High Electron Mobility Transistor (PHEMT)
process to maximize efficiency and output power. The chip
configuration incorporates two stages of reactively
combined amplifiers at the output preceded by an input
amplifier stage. This single channel amplifier provides
typically, 21dB small signal gain and 31dBm output power
at 1dB gain compression.
Features
• 21dB Typical Small Signal Gain
• 2.0:1 Typical Input VSWR, 2.5:1 Typical Output VSWR
• 31dBm Output Power at 1dB Gain Compression
• 32dBm Output Power at 3dB Gain Compression
• 22% Typical Power Added Efficiency at 1dB Gain
Compression
• Chip size: 6.55mm x 2.67mm x 0.1mm
Device
Absolute Ratings
Symbol
Vd
Vg
Vdg
Pin
Id
T_STG
Tc
R_JC
Parameter
Positive Drain DC Voltage
Negative DC Voltage
Simultaneous (Vd–Vg)
RF CW Input Power (50Ω source)
Drain Current
Storage Temperature
Operating Baseplate Temperature
Thermal Resistance (Channel to Backside)
Ratings
8.5
-2
+10.5
27
1.2
-55 to +125
-40 to +85
12
Units
V
V
V
dBm
A
°C
°C
°C/W
Electrical Characteristics (Operated at 25°C, 50Ω system, Vd = +8V, quiescent current (Idq = 600 mA)
Parameter
Frequency Range
Small Signal Gain
P1dB Compression
P3dB Compression
PAE at 1dB Gain Compression
Input Return Loss
Output Return Loss
Gate Voltage (Vg)¹
Gain vs. Temp. 0 ~ 85°C
Min
Typ
Max
Units
6.0
18.0
GHz
15
21
dB
28
31
dBm
30
32
dBm
12
22
%
9.5
dB
7.4
dB
-0.4
V
-0.025
dB/°C
Note:
1. Typical range of the negative gate voltage is -1 to 0V to set a typical Idq of 600 mA.
©2004 Fairchild Semiconductor Corporation
RMPA61810 Rev. B