RMPA5255 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 4.9-5.9 GHz WLAN Linear Power Amplifier Module

September 2005
RMPA5255
4.9–5.9 GHz WLAN Linear Power Amplifier Module
Features
■ Full 4.9 to 5.9 GHz operation
■ 34 dB small signal gain
■ 230 mA total current at 18 dBm modulated power out
■ 2.3% EVM at 18 dBm modulated power out
■ 3.3 V collector supply voltage
■ Integrated power detector with 20 dB dynamic range
■ RoHS compliant 5 x 5 x 1.5 mm leadless package
■ Internally matched to 50Ω and DC blocked RF
input/output
■ Internal DC bias de-coupling
■ Optimized for use in 802.11a applications
Description
The RMPA5255 power amplifier module is designed for high
performance WLAN applications in the 4.9–5.9 GHz frequency
band. The 10 pin, 5 x 5 x 1.5 mm package with internal match-
ing on both input and output to 50Ω, and internal bias network
components, allow for extremely simplified integration. An on-
chip detector provides power sensing capability. The PA’s low
power consumption and excellent linearity are achieved using
our InGaP Heterojunction Bipolar Transistor (HBT) technology.
Device
Electrical Characteristics¹ 802.11a OFDM Modulation
(176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Min
Typ
Frequency
4.9
Collector Supply Voltage
Mirror Supply Voltage
Mirror Supply Current
3.0
3.3
2.9
26
Gain
33
Total Current @ 18dBm Pout
230
EVM @ 18dBm Pout²
2.3
Detector Output @ 18dBm Pout
450
Detector Threshold³
5
Notes:
1. VCC = 3.3V, VPC = 2.9V, T_A = 25°C, PA is constantly biased, 50Ω system.
2. Percentage includes system noise floor of EVM = 0.8%.
3. P_OUT measured at P_IN corresponding to power detection threshold.
Max
5.9
3.6
Units
GHz
V
V
mA
dB
mA
%
mV
dBm
©2005 Fairchild Semiconductor Corporation
1
RMPA5255 Rev. E
www.fairchildsemi.com