RMPA5252 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 4.9-5.9 GHz InGaP HBT WLAN Linear Power Amplifier

Preliminary
March 2005
RMPA5252
4.9–5.9 GHz InGaP HBT WLAN Linear Power Amplifier
Features
■ Full 4.9 to 5.9GHz operation
■ 34dB small signal gain
■ 3% EVM at 18dBm modulated power out
■ 3.3V single positive supply operation
■ Integrated power detector with 20dB dynamic range
■ Lead-free RoHS compliant 3 x 3 x 0.9 mm leadless package
■ Internally matched to 50 Ohms and DC blocked RF input/
output
■ Optimized for use in 802.11a applications
General Description
The RMPA5252 power amplifier is designed for high
performance WLAN applications in the 4.9–5.9 GHz frequency
band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal
matching on both input and output to 50 Ohms minimizes next
level PCB space and allows for simplified integration. An on-chip
detector provides power sensing capability. The PA’s low power
consumption and excellent linearity are achieved using our
InGaP Heterojunction Bipolar Transistor (HBT) technology.
Device
Electrical Characteristics¹ 802.11a OFDM Modulation
(with 176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Frequency
Collector Supply Voltage
Mirror Supply Voltage
Mirror Supply Current
Gain
Total Current @ 18dBm P_OUT
EVM @ 18dBm P_OUT2
Detector Output @ 18dBm P_OUT
Detector Threshold³
Min
4.9
3.0
Typ
3.3
2.4
28
34
275
3.0
500
5
Notes:
1. VCC = 3.3V, VM12, VM34 = 2.4V, T_A = 25°C, PA is constantly biased, 50¾ system.
2. Percentage includes system noise floor of EVM = 0.8%.
3. P_OUT measured at P_IN corresponding to power detection threshold.
Max
5.9
3.6
Units
GHz
V
V
mA
dB
mA
%
mV
dBm
©2005 Fairchild Semiconductor Corporation
1
RMPA5252 Rev. C
www.fairchildsemi.com