RMPA5251 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 4.90-5.85 GHz InGaP HBT Linear Power Amplifier

October 2004
RMPA5251
4.90–5.85 GHz InGaP HBT Linear Power Amplifier
General Description
The RMPA5251 power amplifier is designed for high
performance WLAN applications in the 4.9 to 5.35 and 5.15
to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3
x 0.9 mm package with internal matching on both input and
output to 50Ω minimizes next level PCB space and allows
for simplified integration. The on-chip detector provides
power sensing capability while the logic control provides
power saving shutdown options. The PA’s low power
consumption and excellent linearity are achieved using our
InGaP Heterojunction Bipolar Transistor (HBT) technology.
Features
• 4.9 to 5.85 GHz Operation
• 27dB small signal gain
• 26dBm output power @ 1dB compression
• 2.5% EVM at 18.0dBm modulated power out
• 3.3V single positive supply operation
• Adjustable bias current operation
• Two power saving shutdown options (bias and logic
control)
• Integrated power detector with >18dB dynamic range
• Low profile 16 pin 3 x 3 x 0.9 mm standard QFN leadless
package
• Internally matched to 50Ω
• Minimal external components
Device
• Optimized for use in IEEE 802.11a
WLAN applications
Electrical Characteristics^1,3 802.11a OFDM
Modulation (with 176ms burst time, 100ms idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Frequency ¹⁰
Minimum Typical
4.90
Supply Voltage
3.0
3.3
Gain
27
Total Current @ 18dBm P_OUT
Total Current @ 19dBm P_OUT
EVM @ 18dBm P_OUT2
EVM @ 19dBm P_OUT2
Detector Output @ 19dBm P_OUT
Detector Threshold⁴
P_OUT Spectral Mask Compliance^{5, 6}
250
260
2.5
3.5
450
5.0
21.0
Electrical Characteristics¹ Single Tone
Maximum
5.35
3.6
Minimum
5.15
3.0
Typical
3.3
28
240
250
2.5
3.5
500
5.0
20.0
Maximum
5.85
3.6
Unit
GHz
V
dB
mA
mA
%
%
mV
dBm
dBm
Parameter
Frequency ¹⁰
Supply Voltage
Gain ⁷
Total Quiescent Current^{7, 11}
Minimum
4.90
3.0
Typical
3.3
27
140–220
Maximum
5.35
3.6
Minimum
5.15
3.0
Typical
3.3
27.5
140–220
Maximum
5.85
3.6
Unit
GHz
V
dB
mA
Notes:
1. VC1, VC2, VC3, VM1, VM2, VM3 = 3.3 Volts, Tc=25°C, PA is constantly biased, 50Ω system.
2. Percentage includes system noise floor of EVM=0.8%.
3. Not measured 100% in production.
4. P_OUT measured at P_IN corresponding to power detection threshold.
5. Measured at P_IN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
6. P_IN is adjusted to point where performance approaches spectral mask requirements.
7. 100% Production screened.
8. Bias Current is included in the total quiescent current.
9. VL is set to logic level for device off operation.
10. See Application information on Page 3.
11. See Data on Page 8.
©2004 Fairchild Semiconductor Corporation
RMPA5251 Rev. D