RMPA39000 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 37-40 GHz GaAs MMIC Power Amplifier

June 2004
RMPA39000
37–40 GHz GaAs MMIC Power Amplifier
General Description
The Fairchild Semiconductor RMPA39000 is a high
efficiency power amplifier designed for use in point to point
and point to multi-point radios, and various communi-
cations applications. The RMPA39000 is a 3-stage GaAs
MMIC amplifier utilizing our advanced 0.15µm gate length
Power PHEMT process and can be used in conjunction
with other driver or power amplifiers to achieve the required
total power output.
Features
• 24dB small signal gain (typ.)
• 29dBm saturated power out (typ.)
• Circuit contains individual source vias
• Chip size 4.28mm x 2.90mm x 50µm
Device
Absolute Ratings
Symbol
Vd
Vg
Vdg
I_D
P_IN
T_C
T_STG
R _JC
Parameter
Positive DC Voltage (+5V Typical)
Negative DC Voltage
Simultaneous (Vd–Vg)
Positive DC Current
RF Input Power (from 50Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
Ratings
+6
-2
+8
1092
+20
-30 to +85
-55 to +125
17
Units
V
V
V
mA
dBm
°C
°C
°C/W
©2004 Fairchild Semiconductor Corporation
RMPA39000 Rev. D