RMPA2550 Datasheet, PDF (1/14 Pages) Fairchild Semiconductor – 2.4-2.5 GHz and 5.15-5.85 GHz Dual Band InGaP HBT Linear Power Amplifier

August 2004
RMPA2550
2.4–2.5 GHz and 5.15–5.85 GHz Dual Band InGaP HBT Linear Power Amplifier
General Description
The RMPA2550 is a dual frequency band power amplifier
designed for high performance WLAN applications in the
2.4-2.5 GHz and the 5.15-5.85 GHz frequency bands. The
single low profile 20 pin 3 x 4 x 0.9 mm package with
internal matching on both input and output to 50Ω
minimizes next level PCB space and allows for simplified
integration. The two on-chip detectors provide power
sensing capability while the logic control provides power
saving shutdown options. The PA’s low power consumption
and excellent linearity are achieved using our InGaP
Heterojunction Bipolar Transistor (HBT) technology.
Features
• Dual band operation in a single package design
• 26 dB modulated gain 2.4 to 2.5 GHz band
• 27 dB modulated gain 5.15 to 5.85 GHz band
• 26 dBm output power @ 1 dB compression both
frequency bands
• 2.0% EVM at 18 dBm modulated Pout, 2.45 GHz
• 2.3% EVM at 18 dBm modulated Pout, 5.45 GHz
• 3.3 V single positive supply operation
• Adjustable bias current operation
• Two power saving shutdown options (bias and logic
control)
• Separate integrated power detectors with 20 dB dynamic
range
• Low profile 20 pin, 3 x 4 x 0.9 mm standard _Device
QFN leadless package
• Internally matched to 50 ohms
• Optimized for use in 802.11a/b/g
applications
Electrical Characteristics^1,3 802.11g/a OFDM
Modulation (with 176 µs burst time, 100µs idle time) 54Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Frequency
Supply Voltage
Gain
Total Current @ 18dBm P_OUT
Total Current @ 19dBm P_OUT
EVM @ 18dBm P_OUT2
EVM @ 19dBm P_OUT2
Detector Output @ 19dBm P_OUT
Detector Threshold⁴
P_OUT Spectral Mask Compliance^5,7
Minimum
2.4
3.0
24.5
Typical
3.3
26
150
157
2.0
3.0
508
5.0
21.0
Maximum
2.5
3.6
28
182
189
2.5
3.5
600
7.0
Minimum
5.15
3.0
25.5
Typical
3.3
27
228
235
2.5
3.5
780
5.0
21.0
Maximum
5.85
3.6
29
260
267
3.5
4.5
865
7.0
Unit
GHz
V
dB
mA
mA
%
%
mV
dBm
dBm
Electrical Characteristics^3,6 802.11b CCK
Modulation (RF not framed) 11Mbps Data Rate, 22.0 MHz Bandwidth
Parameter
Minimum Typical Maximum Unit
Frequency
2.4
2.5
GHz
Supply Voltage
3.0
3.3
3.6
V
Gain
24.5
26
28
dB
Total Current
250
mA
First Sidelobe Power
-40
dBc
Second Sidelobe Power
-55
dBc
Max P_OUT Spectral Mask Compliance⁷
24.0
dBm
Notes:
1: VC1 2.4 ,VC2 2.4, VM 2.4, VC1 5.0, VC2 5.0, VC3 5.0, VM13 5.0, VM2 5.0 = 3.3 Volts, T=25°C, PA is constantly biased, 50Ω system. VL adjusted for either 2.4
or 5 GHz operation.
2: Percentage includes system noise floor of EVM=0.8%.
3: Not measured 100% in production.
4: P_OUT measured at P_IN corresponding to power detection threshold.
5: Measured at P_IN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
6: VC1 2.4, VC2 2.4, VM 2.4 = 3.3 Volts, T=25°C, P_OUT =+23 dBm, 50Ω system. Satisfies spectral mask.
7: P_IN is adjusted to point where performance approaches spectral mask requirements.
©2004 Fairchild Semiconductor Corporation
RMPA2550 Rev. D