RMPA2458 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 2.4-2.5 GHz InGaP HBT Low Current Linear Power Amplifier

Preliminary
March 2005
RMPA2458
2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Features
■ 31.5dB small signal gain
■ 27dBm output power @ 1dB compression
■ 103mA total current at 19dBm modulated power out
■ 2.5% EVM at 19 dBm modulated power out
■ 3.3V collector supply operation
■ 2.9V mirror supply operation
■ Power saving shutdown options (bias control)
■ Integrated power detector with 20dB dynamic range
■ Lead-free RoHS compliant 3 x 3 x 0.9mm leadless package
■ Internally matched to 50 Ohms and DC blocked RF input/
output
■ Optimized for use in 802.11b/g applications
General Description
The RMPA2458 power amplifier is designed for high
performance WLAN applications in the 2.4–2.5 GHz frequency
band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal
matching on both input and output to 50 Ohms minimizes next
level PCB space and allows for simplified integration. The on-
chip detector provides power sensing capability while the bias
control provides power saving shutdown capability. The PA’s
industry leading low power consumption and excellent linearity
are achieved using our InGaP Heterojunction Bipolar Transistor
(HBT) technology.
Device
Electrical Characteristics¹ 802.11g OFDM Modulation
(176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Frequency
Collector Supply Voltage
Mirror Supply Voltage
Mirror Supply Current
Gain
Total Current @ 19dBm P_OUT
EVM @ 19dBm P_OUT2
Detector Output @ 19dBm P_OUT
Detector Threshold³
Min
2.4
3.0
Typ
3.3
2.9
3.3
31.5
103
2.5
340
5
Notes:
1. VC1, VC2, VC3 = 3.3V, VM123 = 2.9V, T_A = 25°C, PA is constantly biased, 50Ω system.
2. Percentage includes system noise floor of EVM = 0.8%.
3. P_OUT measured at P_IN corresponding to power detection threshold.
Max
2.5
3.6
Units
GHz
V
V
mA
dB
mA
%
mV
dBm
©2005 Fairchild Semiconductor Corporation
1
RMPA2458 Rev. C
www.fairchildsemi.com