RMPA2455 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 2.4-2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier

September 2005
RMPA2455
2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier
Features
■ 30 dB small signal gain
■ 30 dBm output power @ 1 dB compression
■ 3% EVM at 22 dBm modulated power out
■ 5.0 V positive collector supply operation
■ Two power saving shutdown options (bias and logic control)
■ Integrated power detector with 20 dB dynamic range
■ RoHS compliant low profile 16 pin 3 x 3 x 0.9 mm leadless
package
■ Internally matched to 50Ω and DC blocked RF input/output
■ Optimized for use in 802.11b/g Access Point applications
General Description
The RMPA2455 power amplifier is designed for high
performance WLAN access point applications in the 2.4–2.5
GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm
package with internal matching on both input and output to 50Ω
minimizes next level PCB space and allows for simplified
integration. The on-chip detector provides power sensing
capability while the logic control provides power saving
shutdown options. The PA’s low power consumption and
excellent linearity are achieved using our InGaP Heterojunction
Bipolar Transistor (HBT) technology.
Device
Electrical Characteristics¹ 802.11g OFDM Modulation
(with 176 ms burst time, 100 ms idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth
Parameter
Frequency
Collector Supply Voltage
Mirror Supply Voltage
Gain
Total Current @ 22dBm P_OUT
EVM @ 22dBm P_OUT2
Detector Output @ 22dBm P_OUT
Detector Threshold³
Min
2.4
4.5
2.8
Typ
5.0
3.3
30
195
3.0
960
4
Notes:
1. VC1, VC2 = 5.0 Volts, VM12 = 3.3V, T_A = 25°C, PA is constantly biased, 50Ω system.
2. Percentage includes system noise floor of EVM = 0.8%.
3. P_OUT measured at P_IN corresponding to power detection threshold.
Max
2.5
5.5
3.6
Units
GHz
V
V
dB
mA
%
mV
dBm
©2005 Fairchild Semiconductor Corporation
1
RMPA2455 Rev. F
www.fairchildsemi.com