RMPA2453 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 2.4-2.5 GHz InGaP HBT Linear Power Amplifier

July 2004
RMPA2453
2.4–2.5 GHz InGaP HBT Linear Power Amplifier
General Description
The RMPA2453 power amplifier is designed for high
performance WLAN applications in the 2.4–2.5 GHz
frequency band. The low profile 16 pin 3 x 3 x 0.9 mm
package with internal matching on both input and output to
50Ω minimizes next level PCB space and allows for
simplified integration. The on-chip detector provides power
sensing capability while the logic control provides power
saving shutdown options. The PA’s low power consumption
and excellent linearity are achieved using our InGaP
Heterojunction Bipolar Transistor (HBT) technology.
Features
• 26dB small signal gain
• 26.5dBm output power @ 1dB compression
• 2.5% EVM at 18dBm modulated output power
• 3.5% EVM at 19dBm modulated output power
• 3.3V single positive supply operation
• Two power saving shutdown options (bias and logic
control)
• Integrated power detector with 20dB dynamic range
• Low profile 16 pin 3 x 3 x 0.9 mm leadless package
• Internally matched to 50Ω and DC blocked RF input/
output
• Optimized for use in 802.11b/g applications
Device
Functional Block Diagram
16
15
14
13
V_L 1
RF IN 2
RF IN 3
BIAS
VOLTAGE
DETECTOR
INPUT
MATCH
INT STG
MATCH
12 N/C
OUTPUT
MATCH
11 RF OUT
10 RF OUT
N/C 4
9 N/C
5
6
7
8
Backside Ground
©2004 Fairchild Semiconductor Corporation
Pin
Description
1
V_L (logic)
2
RF IN
3
RF IN
4
N/C
5
VC1
6
N/C
7
N/C
8
N/C
9
N/C
10
RF OUT
11
RF OUT
12
N/C
13
VC2
14
VDET
15
VDET REF
16
VM12
RMPA2453 Rev. D