RMPA2451 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 2.4-2.5 GHz GaAs MMIC Power Amplifier

April 2004
RMPA2451
2.4–2.5 GHz GaAs MMIC Power Amplifier
General Description
Fairchild Semiconductor’s RMPA2451 is a partially
matched monolithic power amplifier in a surface mount
package for use in wireless applications in the 2.4 to 2.5
GHz ISM frequency band. The amplifier may be biased for
linear, class AB or class F for high efficiency applications.
External matching components are required to optimize the
RF performance. The MMIC chip design utilizes our
0.25µm power Pseudomorphic High Electron Mobility
(PHEMT) process.
Features
• 38% power added efficiency
• 29dBm typical output power
• Small package outline: 0.28" x 0.28" x 0.07"
• Low power mode: 0 dBm
Device
Absolute Ratings
Symbol
Vd1, Vd2
Vg1, Vg2
Vd–Vg
P_IN
Id1
Id2
Ig
T_C
T_CASE
T_STG
R_JC
Parameter
Positive Drain DC Voltage
Negative Gate DC Voltage
Simultaneous Drain to Gate Voltage
RF Input Power (from 50Ω source)
Drain Current, First Stage
Drain Current, Second Stage
Gate Current
Channel Temperature
Operating Case Temperature
Storage Temperature Range
Thermal Resistance (Channel to Case)
Min
Max
Units
0
+8
V
-5
0
V
+10
V
+10
dBm
75
mA
525
mA
5
mA
175
°C
-40
85
°C
-40
125
°C
33
°C/W
©2004 Fairchild Semiconductor Corporation
RMPA2451 Rev. B