RMPA2271 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – WCDMA/UMTS Power Edge Power Amplifier Module with Integrated Power Detector

PRELIMINARY
May 2005
RMPA2271
WCDMA/UMTS Power Edge™ Power Amplifier
Module with Integrated Power Detector
Features
■ Temperature compensated, integrated power detector with
>20dB dynamic range
■ 41% WCDMA efficiency at +28dBm average output power
1920–1980MHz
■ Meets UMTS/WCDMA and HSDPA performance
requirements
■ Compact Lead-free compliant LCC package–
(3.0 x 3.0 x 1.0 mm nominal)
■ Single positive-supply operation and low power and
shutdown modes
■ Low Vref (2.85V) compatible with advanced handset
chipsets
■ Internally matched to 50Ω and DC blocked RF
input/output
Device
General Description
The RMPA2271 Power Amplifier Module (PAM) is Fairchild’s
latest innovation in 50Ω matched, surface mount modules
targeting WCDMA/UMTS applications. Answering the call for
integrated Power Detection, the RMPA2271 offers the ability to
measure power output over a 20dB range. This feature
eliminates the need of an external power detector and lossy
directional coupler, improving system perfomance and reducing
overall cost. Simple two-state Vmode control is all that is
needed to change the PA optimization from high power to low
power mode to minimize current usage. The 3 x 3 x 1.0mm LCC
package fits into the tightest spaces available on handset
boards and is footprint compatible with existing 3 x 3mm LCC
power amplifiers. The multi-stage GaAs Microwave Monolithic
Integrated Circuit (MMIC) is manufactured using Fairchild’s
InGaP Heterojunction Bipolar Transistor (HBT) process.
Functional Block Diagram
Vcc1 11
RF IN 22
Vmode ₃₃
Vref 44
MMIC
Input
Match
DC Bias Control
Power Detector
88 ^Vcc2
Output
Match
77
RF OUT
66 ^GND
55 ^Pdet
©2005 Fairchild Semiconductor Corporation
1
RMPA2271 Rev. B
www.fairchildsemi.com