RMPA2265 Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – Dual Band WCDMA Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz

September 2005
RMPA2265
Dual Band WCDMA Power Edge™ Power Amplifier
Module 1850 to 1910 MHz and 1920 to 1980 MHz
Features
■ Single positive-supply operation and low power and shut-
down modes
■ 42% WCDMA efficiency at +28 dBm average output power
1920–1980 MHz
■ 39% WCDMA efficiency at 27.5 dBm average output power
1850–1910 MHz
■ Meets UMTS/WCDMA performance requirements in both
UMTS bands
■ Meets HSDPA performance requirements
■ Compact Lead-free compliant LCC package–
(3.0 x 3.0 x 1.0 mm nominal)
■ Internally matched to 50 Ohms and DC blocked RF
input/output
Device
General Description
The RMPA2265 power amplifier module (PAM) is designed for
WCDMA/HSDPA applications in both the 1850–1910 and 1920–
1980 MHz bands. The 2 stage PAM is internally matched to 50
Ohms to minimize the use of external components and features
a low-power mode to reduce standby current and DC power
consumption during peak phone usage. High power-added effi-
ciency and excellent linearity are achieved using Fairchild’s
InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process.
Functional Block Diagram
(Top View)
Vcc1 1
RF IN 2
Vmode ₃
Vref 4
MMIC
Input
Match
DC Bias Control
8 Vcc2
Output
Match
7 RF OUT
6 GND
5 ^GND
(paddle ground on package bottom)
©2005 Fairchild Semiconductor Corporation
1
RMPA2265 Rev. K
www.fairchildsemi.com