RMPA2263 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – WCDMA Power Amplifier Module 1920-1980 MHz

PRELIMINARY
May 2005
RMPA2263 i-Lo™
i-L
WCDMA Power Amplifier Module
o
™
1920–1980 MHz
Features
■ 40% WCDMA efficiency at +28 dBm Pout
■ 14% WCDMA efficiency (85 mA total current) at +16 dBm
Pout
■ Linear operation in low-power mode up to +19 dBm
■ Low quiescent current (Iccq): 25 mA in low-power mode
■ Meets UMTS/WCDMA performance requirements
■ Meets HSDPA performance requirements
■ Single positive-supply operation with low power and shut-
down modes
– 3.4V typical Vcc operation
– Low Vref (2.85V) compatible with advanced handset
chipsets
■ Compact Lead-free compliant LCC package –
(4.0 x 4.0 x 1.5 mm nominal)
■ Industry standard pinout
■ Internally matched to 50 Ohms and DC blocked RF input/
output
General Description
The RMPA2263 Power Amplifier Module (PAM) is Fairchild’s
latest innovation in 50 Ohm matched, surface mount modules
targeting UMTS/WCDMA/HSDPA applications. Answering the
call for ultra-low DC power consumption and extended battery
life in portable electronics, the RMPA2263 uses novel
proprietary circuitry to dramatically reduce amplifier current at
low to medium RF output power levels (< +16 dBm), where the
handset most often operates. A simple two-state Vmode control
is all that is needed to reduce operating current by more than
50% at 16 dBm output power, and quiescent current (Iccq) by
as much as 70% compared to traditional power-saving
methods. No additional circuitry, such as DC-to-DC converters,
are required to achieve this remarkable improvement in
amplifier efficiency. Further, the 4 x 4 x 1.5 mm LCC package is
pin-compatible and a drop-in replacement for last generation 4 x
4 mm PAMs widely used today, minimizing the design time to
apply this performance-enhancing technology. The multi-stage
GaAs Microwave Monolithic Integrated Circuit (MMIC) is
manufactured using Fairchild RF’s InGaP Heterojunction
Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
(Top View)
Vcc1 1
RF IN 2
GND 3
Vmode 4
Vref 5
MMIC
INPUT
MATCH
BIAS/MODE SWITCH
10 Vcc2
OUTPUT
MATCH
9 GND
8 RF OUT
7 GND
6 GND
11 (paddle ground on package bottom)
©2004 Fairchild Semiconductor Corporation
1
RMPA2263 i-Lo™ Rev. G
www.fairchildsemi.com