RMPA2259 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – 28 dBm WCDMA PowerEdge Power Amplifier Module

May 2005
RMPA2259
28 dBm WCDMA PowerEdge™ Power Amplifier Module
Features
• 40% CDMA efficiency at +28dBm average output power
• Single positive-supply operation and low power and
shutdown modes
• Meets WCDMA/UTMS and HSDPA performance
requirements
• Compact Lead-free compliant LCC package
- 4.0 x 4.0 x 1.5 mm
• Industry standard pinout
• Internally matched to 50Ω and DC blocked RF input/
output
General Description
The RMPA2259 power amplifier module (PAM) is designed
for WCDMA/UTMS and HSDPA applications. The 2-stage
PAM is internally matched to 50Ω to minimize the use of
external components and features a low-power mode to
reduce standby current and DC power consumption during
peak phone usage. High power-added efficiency and
excellent linearity are achieved using our InGaP
Heterojunction Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
(Top View)
Vcc1 1
RF IN 2
GND 3
Vmode 4
Vref 5
MMIC
INPUT
MATCH
BIAS/MODE SWITCH
10 Vcc2
9 GND
OUTPUT
MATCH ^{8 RF OUT}
7 GND
6 GND
11 (paddle ground on package bottom)
©2005 Fairchild Semiconductor Corporation
1
RMPA2259 Rev. E
www.fairchildsemi.com