RMPA2059 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – WCDMA PowerEdge Power Amplifier Module

May 2005
RMPA2059
WCDMA PowerEdge™ Power Amplifier Module
Features
• 40% CDMA efficiency at +27dBm average output power
• Single positive-supply operation and low power and
shutdown modes
• Meets UTMS/WCDMA and HSDPA performance
requirements
• Compact Lead-free compliant LCC package
- 4.0 x 4.0 x 1.5 mm
• Industry standard pinout
• Internally matched to 50Ω and DC blocked RF input/
output
General Description
The RMPA2059 power amplifier module (PAM) is designed
for WCDMA applications. The 2 stage PAM is internally
matched to 50Ω to minimize the use of external
components and features a low-power mode to reduce
standby current and DC power consumption during peak
phone usage. High power-added efficiency and excellent
linearity are achieved using our InGaP Heterojunction
Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
(Top View)
Vcc1 1
RF IN 2
GND 3
Vmode 4
Vref 5
MMIC
INPUT
MATCH
BIAS/MODE SWITCH
10 Vcc2
9 GND
OUTPUT
MATCH ^{8 RF OUT}
7 GND
6 GND
11 (paddle ground on package bottom)
©2005 Fairchild Semiconductor Corporation
1
RMPA2059 Rev. F
www.fairchildsemi.com