RMPA1967 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – US-PCS CDMA, CDMA2000-1X and WDCMA Power Edge Power Amplifier Module

May 2005
RMPA1967
US-PCS CDMA, CDMA2000-1X and WDCMA
Power Edge™ Power Amplifier Module
Features
■ Single positive-supply operation and low power and
shutdown modes
■ 40% CDMA/WCDMA efficiency at +28 dBm average output
power
■ Compact lead-free compliant, LCC package-
(3.0 x 3.0 x 1.0 mm nominal)
■ Internally matched to 50 Ohms and DC blocked RF
input/output
■ Meets CDMA2000-1XRTT/WCDMA performance require-
ments
■ Meets HSDPA performance requirements
■ Alternative pin-out to Fairchild RMPA1965
Device
General Description
The RMPA1967 power amplifier module (PAM) is designed for
CDMA, CDMA2000-1X, WCDMA and HSDPA personal commu-
nications system (PCS) applications. The 2-stage PAM is inter-
nally matched to 50 Ohms to minimize the use of external
components and features a low-power mode to reduce standby
current and DC power consumption during peak phone usage.
High power-added efficiency and excellent linearity are
achieved using Fairchild RF’s InGaP Heterojunction Bipolar
Transistor (HBT) process.
Functional Block Diagram
(Top View)
Vref 1
Vmode 2
RF IN 3
Vcc1 4
MMIC
DC Bias Control
Input
Match
8 GND
7 GND
Output
Match
6 RF OUT
5 Vcc2
©2005 Fairchild Semiconductor Corporation
RMPA1967 Rev. F
(paddle ground on
package bottom)
1
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