RMPA1965_06 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge TM Power Amplifier Module

January 2006
RMPA1965
US-PCS CDMA, CDMA2000-1X and WCDMA
PowerEdge™ Power Amplifier Module
Features
■ Single positive-supply operation with low power and
shutdown modes
■ 40% CDMA/WCDMA efficiency at +28 dBm average
output power
■ Compact lead-free compliant low-profile package
(3.0 x 3.0 x 1.0 mm nominal)
■ Internally matched to 50Ω and DC blocked RF input/
output
■ Meets CDMA2000-1XRTT/WCDMA performance
requirements
■ Meets HSDPA performance requirement
General Description
The RMPA1965 power amplifier module (PAM) is
designed for CDMA, CDMA2000-1X, WCDMA and
HSDPA personal communications system (PCS) appli-
cations. The 2 stage PAM is internally matched to 50Ω to
minimize the use of external components and features a
low-power mode to reduce standby current and DC
power consumption during peak phone usage. High
power-added efficiency and excellent linearity are
achieved using our InGaP Heterojunction Bipolar Tran-
sistor (HBT) process.
Device
Functional Block Diagram
(Top View)
MMIC
Vcc1 1
RF IN 2
INPUT
MATCH
Vmode 3
DC BIAS CONTROL
Vref 4
8 ^Vcc2
OUTPUT
MATCH
7 RF OUT
6 _GND
5 ^GND
(paddle ground on package bottom)
©2006 Fairchild Semiconductor Corporation
1
RMPA1965 Rev. J
www.fairchildsemi.com