RMPA1965 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge Power Amplifier Module

May 2005
RMPA1965
US-PCS CDMA, CDMA2000-1X and WCDMA
PowerEdge™ Power Amplifier Module
Features
■ Single positive-supply operation with low power and shut-
down modes
■ 40% CDMA/WCDMA efficiency at +28 dBm average output
power
■ Compact lead-free compliant low-profile package
(3.0 x 3.0 x 1.0 mm nominal)
■ Internally matched to 50Ω and DC blocked RF input/output
■ Meets CDMA2000-1XRTT/WCDMA performance require-
ments
■ Meets HSDPA performance requirement
General Description
The RMPA1965 power amplifier module (PAM) is designed for
CDMA, CDMA2000-1X, WCDMA and HSDPA personal commu-
nications system (PCS) applications. The 2 stage PAM is inter-
nally matched to 50Ω to minimize the use of external
components and features a low-power mode to reduce standby
current and DC power consumption during peak phone usage.
High power-added efficiency and excellent linearity are
achieved using our InGaP Heterojunction Bipolar Transistor
(HBT) process.
Device
Functional Block Diagram
(Top View)
MMIC
Vcc1 1
RF IN 2
INPUT
MATCH
Vmode 3
DC BIAS CONTROL
Vref 4
8 ^Vcc2
OUTPUT
MATCH
7 RF OUT
6 _GND
5 ^GND
(paddle ground on package bottom)
©2005 Fairchild Semiconductor Corporation
1
RMPA1965 Rev. I
www.fairchildsemi.com