RMPA1959 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – PCS 3.4V CDMA & CDMA2000-1X PowerEdge Power Amplifier Module

September 2004
RMPA1959
PCS 3.4V CDMA & CDMA2000-1X PowerEdge™ Power Amplifier Module
General Description
The RMPA1959 power amplifier module (PAM) is designed
for CDMA and CDMA2000-1X personal communications
system (PCS) applications. The 2 stage PAM is internally
matched to 50Ω to minimize the use of external
components and features advanced DC power
management to reduce current consumption during peak
phone usage. High power-added efficiency and excellent
linearity are achieved using our InGaP Heterojunction
Bipolar Transistor (HBT) technology.
Features
• Single positive-supply operation and low power and
shutdown modes
• 39% CDMA efficiency at +28dBm average output power
• Compact LCC package- 4.0 x 4.0 x 1.5 mm with industry
standard pinout
• Internally matched to 50Ω and DC blocked RF input/
output.
• Meets CDMA2000-1XRTT performance requirements
Device
Absolute Ratings¹
Symbol
Parameter
Min
Vcc1, Vcc2
Supply Voltages
0
Vref
Reference Voltage
2.6
Vmode
Power Control Voltage
0
Pin
RF Input Power
–
T_STG
Storage Temperature
-55
Note:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Max
5.0
3.5
3.5
+10
+150
Units
V
V
V
dBm
°C
©2004 Fairchild Semiconductor Corporation
RMPA1959 Rev. D