RMPA1765_06 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – K-PCS, CDMA, CDMA2000-1X and WCDMA Power Edge Power Amplifier Module

RMPA1765
K-PCS, CDMA, CDMA2000-1X and WCDMA
Power Edge™ Power Amplifier Module
October 2006
Features
■ Single positive-supply operation and low power and
shutdown modes
■ 38% CDMA/WCDMA efficiency at +28 dBm average
output power
■ Compact lead-free compliant LCC package-
3.0 x 3.0 x 1.0mm with industry standard pinout
■ Internally matched to 50 Ohms and DC blocked RF
input/output.
■ Meets CDMA2000-1XRTT/WCDMA performance
requirements
■ Meets HSDPA performance requirements
General Description
The RMPA1765 power amplifier module (PAM) is
designed for Korean CDMA, CDMA2000-1X, WCDMA,
and HSDPA personal communications system (PCS)
applications. The 2 stage PAM is internally matched to
50 Ohms to minimize the use of external components
and features a low-power mode to reduce standby cur-
rent and DC power consumption during peak phone
usage. High power-added efficiency and excellent linear-
ity are achieved using Fairchild RF’s InGaP Heterojunc-
tion Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
PA MODULE
(Top View)
Vcc1 ¹
MMIC
RF IN
2
Input
Match
Vmode 3
DC Bias Control
Vref 4
8 Vcc2
Output
Match
7
RF OUT
6 GND
5 GND
(paddle ground on package bottom)
©2005 Fairchild Semiconductor Corporation
1
RMPA1765 Rev. E
www.fairchildsemi.com