RMPA1765 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – K-PCS, CDMA, CDMA2000-1X and WCDMA Power Edge Power Amplifier Module

March 2005
RMPA1765
K-PCS, CDMA, CDMA2000-1X and WCDMA
Power Edge™ Power Amplifier Module
Features
■ Single positive-supply operation and low power and
shutdown modes
■ 38% CDMA/WCDMA efficiency at +28 dBm average output
power
■ Compact lead-free compliant LCC package-
3.0 x 3.0 x 1.0 mm with industry standard pinout
■ Internally matched to 50 Ohms and DC blocked RF
input/output.
■ Meets CDMA2000-1XRTT/WCDMA performance require-
ments
Device
General Description
The RMPA1765 power amplifier module (PAM) is designed for
Korean CDMA, CDMA2000-1X and WCDMA personal commu-
nications system (PCS) applications. The 2 stage PAM is inter-
nally matched to 50 Ohms to minimize the use of external
components and features a low-power mode to reduce standby
current and DC power consumption during peak phone usage.
High power-added efficiency and excellent linearity are
achieved using Fairchild RF’s InGaP Heterojunction Bipolar
Transistor (HBT) process.
Functional Block Diagram
PA MODULE
(Top View)
Vcc1 ¹
MMIC
RF IN
2
Input
Match
Vmode 3
DC Bias Control
Vref 4
8 Vcc2
Output
Match
7
RF OUT
6 GND
5 GND
(paddle ground on package bottom)
©2005 Fairchild Semiconductor Corporation
1
RMPA1765 Rev. D
www.fairchildsemi.com