RMPA1759 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Korean-PCS PowerEdge Power Amplifier Module

September 2004
RMPA1759
Korean-PCS PowerEdge™ Power Amplifier Module
General Description
The RMPA1759 power amplifier module (PAM) is designed
for Korean CDMA and CDMA2000-1X personal
communications system (PCS) applications. The 2 stage
PAM is internally matched to 50Ω to minimize the use of
external components and features a low-power mode to
reduce standby current and DC power consumption during
peak phone usage. High power-added efficiency and
excellent linearity are achieved using our InGaP
Heterojunction Bipolar Transistor (HBT) process.
Features
• Single positive-supply operation and low power and
shutdown modes
• 38% CDMA efficiency at +28dBm average output power
• Compact LCC package- 4.0 x 4.0 x 1.5 mm with industry
standard pinout
• Internally matched to 50Ω and DC blocked RF input/
output.
• Meets CDMA2000-1XRTT performance requirements
Device
Absolute Ratings¹
Symbol
Parameter
Vcc1, Vcc2
Supply Voltages
Vref
Reference Voltage
Vmode
Power Control Voltage
Pin
RF Input Power
T_STG
Storage Temperature
Note:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Value
5.0
2.6 to 3.5
3.5
+10
-55 to +150
Units
V
V
V
dBm
°C
©2004 Fairchild Semiconductor Corporation
RMPA1759 Rev. C