RMPA0967_06 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Cellular CDMA, CDMA2000-1X and WCDMA Power Edg TM Power Amplifier Module

March 2006
RMPA0967
Cellular CDMA, CDMA2000-1X and WCDMA
Power Edge™ Power Amplifier Module
Features
■ Single positive-supply operation with low power and shut-
down modes
■ 39% CDMA/WCDMA efficiency at +28 dBm average output
power
■ 52% AMPS mode efficiency at +31 dBm output power
■ Lead-free RoHS compliant 3 x 3 x 1mm leadless package
■ Internally matched to 50 Ohms and DC blocked RF
input/output
■ Meets CDMA2000-1XRTT/WCDMA performance
requirements
■ Meets HSDPA performance requirements
■ Alternative pin-out to Fairchild RMPA0965
General Description
The RMPA0967 power amplifier module (PAM) is designed for
cellular band AMPS, CDMA, CDMA2000-1X, WCDMA and
HSDPA applications. The 2 stage PAM is internally matched to
50 Ohms to minimize the use of external components and fea-
tures a low-power mode to reduce standby current and DC
power consumption during peak phone usage. High power-
added efficiency and excellent linearity are achieved using Fair-
child RF’s InGaP Heterojunction Bipolar Transistor (HBT) pro-
cess.
Device
Functional Block Diagram
(Top View)
Vref 1
Vmode 2
RF IN 3
Vcc1 4
MMIC
DC Bias Control
Input
Match
8 GND
Output
Match
7 RF OUT
6 GND
5 Vcc2
©2006 Fairchild Semiconductor Corporation
RMPA0967 Rev. G
(paddle ground on
package bottom)
1
www.fairchildsemi.com