RMPA0965 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – CDMA and CDMA2000-1X PowerEdge Power Amplifier Module

March 2006
RMPA0965
Cellular CDMA, CDMA2000-1X and WCDMA
PowerEdge™ Power Amplifier Module
Features
■ Single positive-supply operation with low power and
shutdown modes
■ 40% CDMA/WCDMA efficiency at +28 dBm average
output power
■ 52% AMPS mode efficiency at +31 dBm output power
■ Lead-free RoHS compliant 3 x 3 x 1mm leadless
package
■ Internally matched to 50 Ohms and DC blocked
RF input/output
■ Meets CDMA2000-1XRTT/WCDMA performance
requirements
■ Meets HSDPA performance requirements
General Description
The RMPA0965 power amplifier module (PAM) is
designed for cellular band AMPS, CDMA, CDMA2000-1X,
WCDMA and HSDPA applications. The 2 stage PAM is
internally matched to 50 Ohms to minimize the use of
external components and features a low-power mode to
reduce standby current and DC power consumption dur-
ing peak phone usage. High power-added efficiency and
excellent linearity are achieved using our InGaP Hetero-
junction Bipolar Transistor (HBT) process.
Device
Functional Block Diagram
(Top View)
MMIC
Vcc1 1
RF IN 2
INPUT
MATCH
Vmode 3
DC BIAS CONTROL
Vref 4
8 ^Vcc2
OUTPUT
MATCH
7 RF OUT
6 GND
5 ^GND
(paddle ground on package bottom)
©2006 Fairchild Semiconductor Corporation
1
RMPA0965 Rev. J
www.fairchildsemi.com