RMPA0959 Datasheet, PDF (1/13 Pages) Fairchild Semiconductor – CDMA and CDMA2000-1X PowerEdge Power Amplifier Module

March 2006
RMPA0959
CDMA and CDMA2000-1X PowerEdge™
Power Amplifier Module
Features
■ Single positive-supply operation with low power and shut-
down modes
■ 39% CDMA efficiency at +28dBm average output power
■ 53% AMPS mode efficiency at +31dBm output power
■ Lead-free RoHS compliant 4 x 4 x 1.5mm leadless
■ Internally matched to 50Ω and DC blocked RF input/output
■ Meets CDMA2000-1XRTT performance requirements
General Description
The RMPA0959 power amplifier module (PAM) is designed for
cellular band AMPS, CDMA and CDMA2000-1X applications.
The 2 stage PAM is internally matched to 50Ω to minimize the
use of external components and features a low-power mode to
reduce standby current and DC power consumption during peak
phone usage. High power-added efficiency and excellent linear-
ity are achieved using our Heterojunction Bipolar Transistor
(HBT) process.
Device
Functional Block Diagram
Vcc1
(5)
PA MODULE
COLLECTOR
BIAS 1
GND
(3, 7, 9,10,11)
RF IN
(4)
Vref
(1)
INPUT
MATCHING
NETWORK
INTERSTAGE
MATCH
INPUT
STAGE ^MMIC
OUTPUT
STAGE
INPUT STAGE
BIAS
OUTPUT STAGE
BIAS
OUTPUT
MATCHING
NETWORK
RF OUT
(8)
VCC=3.4V (nom)
VREF=2.85V (nom)
824-849 MHz
50Ω I/O
BIAS CONTROL
COLLECTOR
BIAS 2
Vcc2
(6)
Vmode (2)
©2006 Fairchild Semiconductor Corporation
1
RMPA0959 Rev. F
www.fairchildsemi.com