RMM2080 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 2-18 GHz Wideband Variable-Gain Driver Amplifier

May 2004
RMM2080
2-18 GHz Wideband Variable-Gain Driver Amplifier
General Description
The Fairchild Semiconductor’s RMM2080 GaAs MMIC
device is a three-stage distributed medium-power amplifier
with gain control capability. The circuit incorporates ion-
implanted, 0.5-µm gate MESFET devices fabricated on a
semi-insulating GaAs substrate. The first two stages are 4-
cell distributed amplifiers utilizing dual-gate FETs for
improved gain per stage and to facilitate gain control
(4x125µm & 4x250µm). The third stage is a 3-cell
distributed dual-gate FET amplifier designed for high output
power and efficiency (3x500µm). The RMM2080 amplifier
is designed for interconnection with microstrip transmission
media using fully automatic assembly techniques.
Features
• 2–18GHz Bandwidth
• 24dB Typical Gain
• ±2dB Gain Flatness
• 20dBm Output Power Typical
• Three Stages of Distributed Amplification
• Gain Control of up to 70dB range
• Dual-Gate Ion-Implanted 0.5µm FETs
• Chip Size: 4.14mm x 3.22mm x 0.1mm
Device
Absolute Ratings
Symbol
Vd
Vg
Vgd
Id
P_IN(CW)
T_CASE
T_STORAGE
R_JC
Parameter
Positive Drain DC Voltage (+7V Typ)
Negative DC Voltage
Simultaneous (Vd-Vg)
Positive DC Current
RF Input Power (from 50Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
Ratings
+8
-2
10
400
+8
-30 to +85
-55 to +125
22
Units
V
V
V
mA
dBm
°C
°C
°C/W
©2004 Fairchild Semiconductor Corporation
RMM2080 Rev. C