RMBA09501A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Cellular 2 Watt Linear GaAs MMIC Power Amplifier

May 2004
RMBA09501A
Cellular 2 Watt Linear GaAs MMIC Power Amplifier
General Description
The RMBA09501A is a high power, highly linear Power
Amplifier. The two stage circuit uses our advanced 0.25µm
pHEMT process. It is designed for use as a driver stage for
Cellular base stations, or as the output stage for Micro- and
Pico-Cell base stations. The amplifier has been optimized
for high linearity requirements for CDMA operation.
Features
• 2 Watt Linear output power at 36dBc ACPR1 for CDMA
operation
• OIP3 ≥ 43dBc at 27 and 30dBm power output
• Small Signal Gain of > 30dB
• Small outline SMD package
Device
Absolute Ratings
Symbol
V_DD
V_GS
Pin
T_C
T_STG
Parameter
Drain Supply Voltage¹
Gate Supply Voltage
RF Input Power (from 50Ω source)
Case Operating Temperature
Storage Temperature Range
Note:
1. Only under quiescent conditions—no RF applied.
Value
+10
-5
+5
-30 to +85
-40 to +100
Units
V
V
dBm
°C
°C
©2003 Fairchild Semiconductor Corporation
RMBA09501A Rev. C