RMBA09501 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Cellular 2 Watt Linear GaAs MMIC Power Amplifier

May 2004
RMBA09501
Cellular 2 Watt Linear GaAs MMIC Power Amplifier
General Description
The RMBA09501 is a highly linear Power Amplifier. The
two stage circuit uses our pHEMT process. It is designed
for use as a driver stage for Cellular base stations, or as the
output stage for Micro- and Pico-Cell base stations. The
amplifier has been optimized for high linearity requirements
for CDMA operation.
Features
• 2 Watt Linear output power at 36dBc ACPR1 for CDMA
operation
• Small Signal Gain of > 30dB
• Small outline SMD package
Device
Absolute Ratings
Symbol
V_DD
V_GS
P_RF
T_C
T_S
Parameter
Drain Supply Voltage¹
Gate Supply Voltage
RF Input Power (from 50Ω source)
Case Operating Temperature
Storage Temperature
Note:
1. Only under quiescent conditions—no RF applied.
Min
Max
Units
+10
V
-5
V
+5
dBm
-30
+85
°C
-40
+100
°C
©2004 Fairchild Semiconductor Corporation
RMBA09501 Rev. C