RHRP860_11 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 8A,600V Hyperfast Diodes

Data Sheet
RHRP860_F085
September 2011
8A,600V Hyperfast Diodes
The RHRP860_F085 is hyperfast diodes with soft
recovery characteristics (t_rr < 30ns). It has half the
recovery time of ultrafast diodes and is silicon nitride
passivated ion-implanted epitaxial planar construction.
This device is intended for use as
freewheeling/clamping diodes and rectifiers in a variety of
switching power supplies and other power switching
applications. Its low stored charge and hyperfast soft
recovery minimize ringing and electrical noise in many
power switching circuits reducing power loss in the switching
transistors.
Formerly developmental type TA49059.
Ordering Information
PART NUMBER
PACKAGE
RHRP860_F085
TO-220AC
BRAND
RHRP860_F085
NOTE: When ordering, use the entire part number.
Symbol
K
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175^oC
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC TO-220AC
CATHODE
(FLANGE)
ANODE
CATHODE
A
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_F(AV)
(T_C = 150^oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_FRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_STG, T_J
RHRP860_F085
600
600
600
8
UNITS
V
V
V
A
16
A
100
A
75
W
20
mJ
-65 to 175
o_C
©2011 Fairchild Semiconductor Corporation
RHRP860_F085 Rev. C