RHRD660S9A_F085 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 6A, 600V Hyperfast Diodes

Data Sheet
RHRD660S9A_F085
May 2013
6A, 600V Hyperfast Diodes
The RHRD660S9A_F085 is hyperfast diodes with
soft recovery characteristics (t_rr < 30ns). It has half the
recovery time of ultrafast diodes and are silicon nitride
passivated ion-implanted epitaxial planar construction.
This device is intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Its low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA49057.
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175^oC
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
• Qualified to AEC Q101
• RoHS Compliant
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PART NUMBER
RHRD660S9A_F085
PACKAGE
TO-252
Symbol
K
A
BRAND
RHR660
Packaging
JEDEC STYLE TO-252
CATHODE
ANODE
CATHODE
(FLANGE)
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
RHRD660S9A_F085
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_RRM
600
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_RWM
600
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_R
600
Average Rectified Forward Current
(T_C = 152^oC)
.....................................................
I_F(AV)
6
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_FRM
12
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_FSM
60
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_STG, T_J
Maximum Lead Temperature for Soldering
50
10
-55 to 175
(Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
300
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_PKG
260
UNITS
V
V
V
A
A
A
W
mJ
o_C
o_C
o_C
©2011 Fairchild Semiconductor Corporation
RHRD660S9A_F085 Rev.C2