RGP10J Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – RGP10A - RGP10M

RGP10A - RGP10M
Features
• 1.0 ampere operation at T_A = 55°C
with no thermal runaway.
• High temperature metallurgically
bonded construction.
• Glass passivated cavity-free junction.
• Typical I_R less than 1µA.
• Fast switching for high efficiency.
DO-41
COLOR BAND DENOTES CATHODE
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
10A 10B 10D 10G 10J
V_RRM
I_F(AV)
I_FSM
T_stg
T_J
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current,
.375 " lead length @ T_L = 55°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
50 100 200 400 600
1.0
30
-65 to +175
-65 to +175
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
10K
800
10M
1000
Units
V
A
A
°C
°C
Thermal Characteristics
Symbol
Parameter
P_D
Power Dissipation
R_θJA
Thermal Resistance, Junction to Ambient
Value
3.0
50
Units
W
°C/W
Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
V_F
Forward Voltage @ 1.0 A
t_rr
Reverse Recovery Time
I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A
I_R
Reverse Current @ rated V_R T_A = 25°C
T_A = 150°C
C_T
Total Capacitance
V_R = 4.0 V, f = 1.0 MHz
Device
10A 10B 10D 10G 10J 10K 10M
1.3
150
250
500
5.0
200
15
Units
V
ns
µA
µA
pF
2001 Fairchild Semiconductor Corporation
RPG10A - RPG10M, Rev. C