RGF1A Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – 1.0 Ampere Fast Recovery Rectifiers

Features
RGF1A - RGF1M
• Glass passivated junction.
• For surface mounted application.
• Low forward voltage drop.
• High current capability.
• Easy pick and place.
• High surge current capability.
3.93
3.73
0.062 (1.575)
0.055 (1.397)
2
1.67
1.47
+
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
0.181 (4.597)
0.157 (3.988)
0.208 (5.283)
0.188 (4.775)
2.38
2.18
5.49
5.29
Minimum Recommended
Land Pattern
1.0 Ampere Fast Recovery Rectifiers
0.060 (1.524) 0.008 (0.203)
0.030 (0.762) 0.002 (0.051)
1
0.114 (2.896)
0.098 (2.489)
0.096 (2.438)
0.078 (1.981)
0.012 (0.305)
0.006 (0.152)
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
IO
if(surge)
Average Rectified Current
@ TL = 125°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient **
RθJL
Thermal Resistance, Junction to Lead**
Tstg
Storage Temperature Range
TJ
Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
1.0
30
1.76
11.7
85
28
-65 to +175
-65 to +175
Units
A
A
W
mW/°C
°C/W
°C/W
°C
°C
Electrical Characteristics T_A = 25°C unless otherwise noted
Parameter
Device
1A
1B
1D
1G
1J
Peak Repetitive Reverse Voltage
50
100
200
400
600
Maximum RMS Voltage
35
70
140
280
420
DC Reverse Voltage (Rated V_R)
Maximum Reverse Current
@ rated V_R
T_A = 25°C
T_A = 125°C
Maximum Forward Voltage @ 1.0 A
50
100
200
400
600
5.0
100
1.3
Maximum Reverse Recovery Time
I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A
Typical Junction Capacitance
V_R = 4.0 V, f = 1.0 MHz
150
250
8.5
Units
1K
1M
800
1000
V
560
700
V
800
1000
V
µA
µA
V
500
nS
pF
1998 Fairchild Semiconductor International
RGF1A-RGF1M, Rev. E