RFG60P05E Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET

Data Sheet
January 2002
RFG60P05E
60A, 50V, 0.030 Ohm, ESD Rated,
P-Channel Power MOSFET
This is a P-Channel power MOSFET manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. It was
designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. This type can be operated directly from integrated
circuits.
Formerly developmental type TA09835.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG60P05E
TO-247
RFG60P05E
NOTE: When ordering, use the entire part number.
Features
• 60A, 50V
• r_DS(ON) = 0.030Ω
• Temperature Compensating PSPICE^® Model
• 2kV ESD Rated
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175^oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
©2002 Fairchild Semiconductor Corporation
RFG60P05E Rev. B