RFD16N05L Datasheet, PDF (1/7 Pages) Intersil Corporation – 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

Data Sheet
RFD16N05L, RFD16N05LSM
December 2003
16A, 50V, 0.047 Ohm, Logic Level,
N-Channel Power MOSFETs
These are N-Channel logic level power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI
integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use with logic level (5V) driving sources in applications
such as programmable controllers, automotive switching,
switching regulators, switching converters, motor relay
drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate biases
in the 3V to 5V range, thereby facilitating true on-off power
control directly from logic circuit supply voltages.
Formerly developmental type TA09871.
Ordering Information
PART NUMBER
RFD16N05L
PACKAGE
TO-251AA
BRAND
RFD16N05L
RFD16N05LSM
TO-252AA
RFD16N05LSM
NOTE: When ordering, include the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e. RFD16N05LSM9A
Packaging
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 16A, 50V
• r_DS(ON) = 0.047Ω
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
©2003 Fairchild Semiconductor Corporation
RFD16N05L, RFD16N05LSM Rev. B1