RB751S40_08 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Schottky Barrier Diodes

March 2008
RB751S40
Schottky Barrier Diodes
• Low Forward Voltage Drop
• Flat Lead, Surface Mount Device at 0.60mm Height
• Extremely Small Outline Plastic Package SOD523F
• Moisture Level Sensitivity 1
• Pb-free Version and RoHS Compliant
• Matte Tin (Sn) Lead Finish
• Green Mold Compound
Absolute Maximum Ratings* T_a=25qC unless otherwise noted
Symbol
V_RRM
I_F(AV)
I_FSM
T_J
T_STG
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-Repetitive Peak Forward Current
Operating Junction Temperature Range
Storage Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
R_TJA
Thermal Resistance, Junction to Ambient
P_D
Total Device Dissipation(T_C=25qC)
*Device mounted on FR-4 PCB minimum land pad.
Electrical Characteristics* T_a=25qC unless otherwise noted
Symbol
Parameter
Test Conditions
BV_R
Breakdown Voltage
I_R
Reverse Current
V_F
Forward Voltage
I_R = 500 PA
V_R = 10 V
I_F = 1mA
Min.
30
SOD-523F
Band Indicates Cathode*
Marking: 4B
Value
40
30
500
-55 to +125
-55 to +125
Units
V
mA
mA
qC
qC
Value
500
200
Unit
qC/W
mW
Typ.
Max.
0.5
0.37
Units
V
PA
V
© 2007 Fairchild Semiconductor Corporation
RB751S40 Rev. 1.0
1
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