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QSE213C Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Plastic Silicon Infrared Phototransistor | |||
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March 2006
QSE213C/QSE214C
Plastic Silicon Infrared Phototransistor
Features
â NPN Silicon Phototransistor
â Package Type: Sidelooker
â Medium Reception Angle, 50°
â Daylight Filter
â Clean Epoxy Package
â Matching Emitter: QEE213
Description
The QSE213C/QSE214C is a silicon phototransistor encapsu-
lated in a medium angle, infrared transparent, clear thin plastic
sidelooker package.
Package Dimensions
0.174 (4.44)
0.060 (1.50)
R 0.030 (0.76)
0.224 (5.71)
0.047 (1.20)
0.177 (4.51)
0.5 (12.7)
MIN
0.030 (0.76)
EMITTER
0.100 (2.54)
0.020 (0.51)
SQ. (2X)
Notes:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal
dimensions unless otherwise speciï¬ed.
Schematic
Collector
Emitter
©2006 Fairchild Semiconductor Corporation
1
QSE213C/QSE214C Rev. 1.0.0
www.fairchildsemi.com
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