QSD2030 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – PLASTIC SILICON PHOTODIODE

QSD2030
PLASTIC SILICON PHOTODIODE
PACKAGE DIMENSIONS
0.195 (4.95)
REFERENCE
SURFACE
0.305 (7.75)
0.800 (20.3)
MIN
0.040 (1.02)
NOM
FEATURES
• PIN Photodiode
• Package type: T-1 3/4 (5mm lens diameter)
• Wide Reception Angle, 40°
• Package material and color: Clear epoxy
• High Sensitivity
• Peak Sensitivity D= 880 nm
0.050 (1.25)
CATHODE
0.100 (2.54)
NOM
0.020 (0.51)
SQ. (2X)
0.240 (6.10)
0.215 (5.45)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1. Derate power dissipation linearly 1.33
mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are
recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) minimum
from housing.
SCHEMATIC
CATHODE
ANODE
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)^(2,3,4)
Soldering Temperature (Flow)^(2,3)
Reverse Breakdown Voltage
Power Dissipation⁽¹⁾
Symbol
T_OPR
T_STG
T_SOL-I
T_SOL-F
V_BR
P_D
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
50
100
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
Peak Sensitivity Wavelength
DPS
—
880
Wavelength Sensitivity Range
DSR
400
—
Reception Angle
0
—
±20
Forward Voltage
IF = 80 mA
VF
—
1.3
Reverse Dark Current
VR = 20 V, Ee = 0
ID
—
—
Reverse Light Current
Ee = 0.5 mW/cm², VR = 5 V, D = 950 nm
IL
15
25
Capacitance
VR = 0, f = 1 MHz, Ee = 0
C
—
60
Rise Time
Fall Time
VR = 5 V, R_L = 50 1
D = 950 nm
tr
—
5
tf
—
5
Unit
°C
°C
°C
°C
V
mW
MAX
—
1100
—
—
5
—
—
—
UNITS
nm
nm
Deg.
V
nA
µA
pF
ns
10/31/01