QSC112_06 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Plastic Silicon Infrared Phototransistor

October 2006
QSC112, QSC113, QSC114
Plastic Silicon Infrared Phototransistor
Features
■ Tight prod_Pu_Act_Cion_Kd_Ais_Gtrib_Eut_Dion_IMENSIONS
■ Steel lead frames for improved reliability in solder
mounting
■ Good optical-to-mechanical alignment
■ Plastic package is infrared transparent black to
attenuate visible light
■ Can be used with QECXXX LED
■ Black plastic body allows easy recognition from LED
Description
The QSC112/113/114 is a silicon phototransistor encap-
sulated in an infrared transparent, black T-1 package.
Package Dimensions
0.116 (2.95)
REFERENCE
SURFACE
0.052 (1.32)
0.032 (0.082)
0.193 (4.90)
0.800 (20.3)
MIN
0.030 (0.76)
NOM
0.050 (1.27)
EMITTER
0.100 (2.54)
NOM
0.155 (3.94)
0.018 (0.46)
SQ. (2X)
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.10 (.25) on all non-nominal dimensions
unless otherwise specified.
Schematic
COLLECTOR
EMITTER
©2005 Fairchild Semiconductor Corporation
1
QSC112, QSC113, QSC114 Rev. 1.0.1
www.fairchildsemi.com