QSB363_05 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Subminiature Plastic Silicon Infrared Phototransistor

November 2005
QSB363
Subminiature Plastic Silicon Infrared Phototransistor
Features
■ NPN Silicon Phototransistor
■ T-3/4 (2mm) Surface Mount Package
■ Medium Wide Beam Angle, 24°
■ Black Plastic Package
■ Matched Emitters: QEB363 or QEB373
Package Dimensions
0.276 (7.0)
MIN
■ Daylight Filter
■ Tape & Reel Option (See Tape & Reel Specifications)
■ Lead Form Options: Gullwing, Yoke, Z-Bend
Description
The QSB363 is a silicon phototransistor encapsulated in a black
infrared transparent T-3/4 package.
EMITTER
0.024 (0.6)
0.016 (0.4)
0.074 (1.9)
0.087 (2.2)
0.071 (1.8)
0.019 (0.5)
0.012 (0.3)
.118 (3.0)
.102 (2.6)
0.008 (0.21)
0.004 (0.11)
.059 (1.5)
.051 (1.3)
0.055 (1.4)
0.106 (2.7)
0.091 (2.3)
0.024 (0.6)
NOTES:
1. Dimensions are in inches (mm).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
SCHEMATIC
COLLECTOR
EMITTER
©2005 Fairchild Semiconductor Corporation
1
QSB363 Rev. 1.0.2
www.fairchildsemi.com