QSB363C_05 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Subminiature Plastic Silicon Infrared Phototransistor

September 2005
QSB363C
Subminiature Plastic Silicon Infrared Phototransistor
Features
■ NPN Silicon Phototransistor
■ T-3/4 (2mm) Surface Mount Package
■ Medium Wide Beam Angle, 24°
■ Clear Plastic Package
■ Matched Emitters: QEB363 or QEB373
Package Dimensions
0.276 (7.0)
MIN
■ Tape & Reel Option (See Tape & Reel Specifications)
■ Lead Form Options: Gullwing, Yoke, Z-Bend
Description
The QSB363C is a silicon phototransistor encapsulated in a clear
infrared T-3/4 package.
EMITTER
0.024 (0.6)
0.016 (0.4)
0.074 (1.9)
0.087 (2.2)
0.071 (1.8)
0.019 (0.5)
0.012 (0.3)
.118 (3.0)
.102 (2.6)
0.008 (0.21)
0.004 (0.11)
.059 (1.5)
.051 (1.3)
0.055 (1.4)
0.106 (2.7)
0.091 (2.3)
0.024 (0.6)
NOTES:
1. Dimensions are in inches (mm).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
SCHEMATIC
COLLECTOR
EMITTER
©2005 Fairchild Semiconductor Corporation
1
QSB363C Rev. 1.0.2
www.fairchildsemi.com