QSB320 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR

QSB320
SURFACE MOUNT SILICON
INFRARED PHOTOTRANSISTOR
PACKAGE DIMENSIONS
0.118 (3.0)
0.102 (2.6)
0.091 (2.3)
0.083 (2.1)
0.035 (0.9)
0.028 (0.7)
0.083 (2.1)
0.067 (1.7)
0.041 (0.1)
0.134 (3.4)
0.118 (3.0)
0.094 (2.4)
COLLECTOR
0.024 (0.6)
0.016 (0.4)
0.007 (.18)
0.005 (.12)
0.043 (1.1)
0.020 (0.5)
NOTES:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
FEATURES
• Surface Mount PLCC-2 Package
• Wide Reception Angle, 120°
• High Sensitivity
• Phototransistor Output
• Matched Emitter: QEB421
SCHEMATIC
COLLECTOR
EMITTER
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Flow)^(2,3)
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Power Dissipation⁽¹⁾
Symbol
Rating
Unit
T_OPR
-55 to +100
°C
T_STG
-55 to +100
°C
T_SOL-F 260 for 10 sec
°C
V_CE
35
V
V_EC
5
V
I_C
15
mA
PD
165
mW
NOTES
1. Derate power dissipation linearly
2.2 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.
4. D= 940 nm.
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
Peak Sensitivity Wavelength
Wavelength Sensitivity Range
Reception Angle
D_PS
—
D_SR
400
0
—
Collector Emitter Dark Current
V_CE = 25 V, E_e = 0
I_D
—
Collector Emitter Breakdown
I_C = 1 mA
BV_CEO
30
Emitter Collector Breakdown
I_E = 100 µA
BV_ECO
5
On-State Collector Current
E_e = 0.1 mW/cm²⁽⁴⁾, V_CE = 5 V
I_{C (ON)}
16
Saturation Voltage
E_e = 0.5 mW/cm²⁽⁴⁾, I_C = 0.05 mA
V_{CE (SAT)}
—
Rise Time
V_CC = 5 V, R_L = 100 1
t_r
—
Fall Time
I_C = 1 mA
t_f
—
TYP
MAX
UNITS
880
—
nm
—
1000
nm
120
—
Deg.
—
200
nA
—
—
V
—
—
V
—
—
µA
—
0.3
V
8
—
µs
8
—
µs
 2001 Fairchild Semiconductor Corporation
DS300386 2/26/01
1 OF 3
www.fairchildsemi.com