QRB1133 Datasheet, PDF (1/4 Pages) QT Optoelectronics – REFLECTIVE OBJECT SENSORS

PHOTOTRANSISTOR
REFLECTIVE OBJECT SENSORS
QRB1133 QRB1134
PACKAGE DIMENSIONS
24.0 (609.60)
MIN #26 AWG
(A)
(K)
0.420 (10.67)
0.328 (8.33)
0.150 (3.81)
NOM
0.226 (5.74)
0.373 (9.47)
0.703 (17.86)
(E)
(C)
0.020 (0.51)
4X
0.300 (7.62)
0.150 (3.81)
MIN
0.603 (15.32)
FUNCTION
(C) COLLECTOR
(E) EMITTER
(K) CATHODE
(A) ANODE
WIRE COLOR
WHITE
BLUE
GREEN
ORANGE
REFLECTIVE
SURFACE
0.210 (5.33)
SCHEMATIC
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
AK
CE
DESCRIPTION
The QRB1133/1134 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converg-
ing optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective
object passes within its field of view. The area of the optimum response approximates a circle .200” in diameter.
FEATURES
• Phototransistor output
• High Sensitivity
• Low cost plastic housing
• #26 AWG, 24 inch PVC wire termination
• Infrared transparent plastic covers for dust protection
 2001 Fairchild Semiconductor Corporation
DS300351 7/02/01
1 OF 4
www.fairchildsemi.com