QED121 Datasheet, PDF (1/3 Pages) QT Optoelectronics – PLASTIC INFRARED LIGHT EMITTING DIODE

PACKAGE DIMENSIONS
0.195 (4.95)
REFERENCE
SURFACE
0.305 (7.75)
0.800 (20.3)
MIN
0.040 (1.02)
NOM
0.050 (1.25)
CATHODE
0.100 (2.54)
NOM
NOTES:
0.020 (0.51)
SQ. (2X)
0.240 (6.10)
0.215 (5.45)
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
QED121/122/123
PLASTIC INFRARED
LIGHT EMITTING DIODE
FEATURES
• D= 880 nm
• Chip material = AlGaAs
• Package type: T-1 3/4 (5mm lens diameter)
• Matched Photosensor: QSD122/123/124
• Narrow Emission Angle, 18°
• High Output Power
• Package material and color: Clear, peach tinted, plastic
1. Derate power dissipation linearly 2.67
mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are
recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) minimum
from housing.
SCHEMATIC
ANODE
CATHODE
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)^(2,3,4)
Soldering Temperature (Flow)^(2,3)
Continuous Forward Current
Reverse Voltage
Power Dissipation⁽¹⁾
Symbol
T_OPR
T_STG
T_SOL-I
T_SOL-F
I_F
V_R
P_D
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
100
5
200
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
Peak Emission Wavelength
I_F = 20 mA
D_PE
Emission Angle
I_F = 100 mA
0
Forward Voltage
I_F = 100 mA, tp = 20 ms
V_F
—
880
—
±9
—
—
Reverse Current
V_R = 5 V
I_R
—
—
Radiant Intensity QED121 I_F = 100 mA, tp = 20 ms
I_E
16
—
Radiant Intensity QED122 I_F = 100 mA, tp = 20 ms
I_E
32
—
Radiant Intensity QED123 I_F = 100 mA, tp = 20 ms
I_E
50
—
Rise Time
Fall Time
I_F = 100 mA
t_r
—
800
t_f
—
800
 2001 Fairchild Semiconductor Corporation
DS300336 4/19/01
1 OF 3
Unit
°C
°C
°C
°C
mA
V
mW
MAX
—
—
1.7
10
40
100
—
—
—
UNITS
nm
Deg.
V
µA
mW/sr
mW/sr
mW/sr
ns
ns
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