QEC112 Datasheet, PDF (1/4 Pages) QT Optoelectronics – GAAS INFRARED EMITTING DIODE

QEC112
PACKAGE DIMENSIONS
0.116 (2.95)
REFERENCE
SURFACE
0.052 (1.32)
0.032 (0.082)
0.800 (20.3)
MIN
0.193 (4.90)
0.030 (0.76)
NOM
0.050 (1.27)
CATHODE
0.100 (2.54)
NOM
0.018 (0.46)
SQ. (2X)
0.155 (3.94)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEC113
SCHEMATIC
ANODE
CATHODE
DESCRIPTION
The QEC11X is an 940 nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package.
FEATURES
• D= 940 nm
• Chip material = GaAs
• Package type: T-1 (3mm)
• Matched Photosensor: QSC112
• Narrow Emission Angle, 24°
• High Output Power
• Package material and color: Clear, peach tinted plastic
 2001 Fairchild Semiconductor Corporation
DS300334 5/21/01
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www.fairchildsemi.com