QEB421 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – SURFACE MOUNT INFRARED

QEB421
SURFACE MOUNT INFRARED
LIGHT EMITTING DIODE
PACKAGE DIMENSIONS
0.118 (3.0)
0.102 (2.6)
0.091 (2.3)
0.083 (2.1)
0.035 (0.9)
0.028 (0.7)
0.083 (2.1)
0.067 (1.7)
0.041 (0.1)
0.134 (3.4)
0.118 (3.0)
0.094 (2.4)
0.043 (1.1)
0.020 (0.5)
ANODE
0.024 (0.6)
0.016 (0.4)
0.007 (.18)
0.005 (.12)
NOTES:
1. Dimensions are in inches (mm)
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
FEATURES
• Wavelength = 880 nm, AlGaAs
• Wide Emission Angle, 120°
• Surface Mount PLCC-2 Package
• High Power
SCHEMATIC
ANODE
CATHODE
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Flow)^(2,3)
Continuous Forward Current
Reverse Voltage
Peak Forward Current⁽⁴⁾
Power Dissipation⁽¹⁾
Symbol
Rating
Unit
T_opr
-55 to +100
°C
T_stg
-55 to +100
°C
T_sol
260 for 10 sec
°C
I_F
100
mA
V_R
5
V
I_FM
1.75
A
PD
180
mW
NOTES
1. Derate power dissipation linearly
2.4 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.
4. Pulse conditions; tp = 100 µs,
T = 10 ms.
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN.
Peak Emission Wavelength
Spectral Bandwidth
Emission Angle
I_F = 100 mA
I_F = 100 mA
I_F = 100 mA
D_P
—
D
—
0
—
Forward Voltage
I_F = 100 mA, tp = 20 ms
V_F
—
I_F = 1 A, tp = 100 µs
—
Reverse Current
V_R = 5 V
I_R
—
Radiant Intensity
I_F = 100 mA, tp = 20 ms
Ie
4
Radiant Flux
I_F = 1 A, tp = 100 µs
—
I_F = 100 mA, tp = 20 ms
>e
—
Temp. Coeff. of I_E
I_F = 100 mA
T_CI
—
Temp. Coeff. of V_F
Temp. Coeff. of D
Rise Time
I_F = 100 mA
I_F = 100 mA
I_F = 100 mA
T_CV
—
T_CD
—
t_r
—
Fall Time
t_f
—
TYP.
MAX.
880
—
80
—
120
—
1.5
1.8
3.0
3.8
—
1
—
8
48
—
10
—
-0.5
—
-4
—
0.25
—
—
1
—
1
UNITS
nm
nm
Deg.
V
µA
mW/sr
mW
%/K
mV/K
nm/K
µs
µs
 2001 Fairchild Semiconductor Corporation
DS300385 2/26/01
1 OF 3
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