QEB373 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – SUBMINIATURE PLASTIC INFRARED EMITTING DIODE

QEB373
SUBMINIATURE PLASTIC INFRARED
EMITTING DIODE
PACKAGE DIMENSIONS
0.276 (7.0)
MIN
0.024 (0.6)
0.016 (0.4)
0.074 (1.9)
CATHODE
0.087 (2.2)
0.071 (1.8)
0.019 (0.5)
0.012 (0.3)
.118 (3.0)
.102 (2.6)
0.008 (0.21)
0.004 (0.11)
.059 (1.5)
.051 (1.3)
0.055 (1.4)
0.024 (0.6)
0.106 (2.7)
0.091 (2.3)
NOTES:
1. Dimensions are in inches (mm).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
FEATURES
• T-3/4 (2mm) Surface Mount Package
• Tape & Reel Option (See Tape & Reel Specifications)
• Lead Form Options: Gullwing, Yoke, Z-Bend
• Narrow Emission Angle, 24°
• Wavelength = 880nm, AlGaAs
• Clear Lens
SCHEMATIC
• Matched Photosensor: QSB363
• High Radiant Intensity
ANODE
CATHODE
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)^(2,3,4)
Soldering Temperature (Flow)^(2,3)
Continuous Forward Current
Reverse Voltage
Power Dissipation⁽¹⁾
Symbol
T_OPR
T_STG
T_SOL-I
TSOL-F
I_F
V_R
PD
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
50
5
100
Units
°C
°C
°C
°C
mA
V
mW
NOTES
1. Derate power dissipation linearly
1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.
4. Soldering iron tip at 1/16” (1.6mm)
from housing
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
PARAMETER
Peak Emission Wavelength
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity
Rise Time
Fall Time
TEST CONDITIONS
I_F = 100mA
I_F = 100mA
I_F = 100mA, t_P = 20ms
V_R = 5V
I_F = 100mA, t_P = 20ms
I_F = 100mA,
t_P = 20ms
SYMBOL
l_P
U
V_F
I_R
Ie
t_r
t_f
MIN.
—
—
—
—
16
—
—
TYP.
MAX.
880
—
±12
—
—
1.7
—
100
—
—
800
—
800
—
UNITS
nm
Deg.
V
µA
mW/sr
ns
ns
1 of 4
100008A